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| 4N29, 4N30, 4N31, 4N32, 4N33 OPTICALLY COUPLED ISOLATOR PHOTODARLINGTON OUTPUT APPROVALS l UL recognised, File No. E91231 2.54 6.9 6.1 8.9 max. 1 2 3 Dimensions in mm 6 5 4 8.3 max. 5.3 max. 2.54 min. 15 max. DESCRIPTION The 4N29, 4N30, 4N31, 4N32, 4N33 series of optically coupled isolators consist of an infrared light emitting diode and NPN silicon photodarlington in a space efficient dual in line plastic package. FEATURES Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Current Transfer Ratio l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l All electrical parameters 100% tested l Custom electrical selections available l 1.4 0.9 0.48 0.25 ABSOLUTE MAXIMUM RATINGS (25C unless otherwise specified) Storage Temperature -55C to + 150C Operating Temperature -55C to + 100C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260C INPUT DIODE Forward Current Reverse Voltage Power Dissipation OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Collector-base Voltage BVCBO Emitter-collector Voltage BVECO Power Dissipation POWER DISSIPATION 30V 50V 5V 150mW 80mA 5V 100mW APPLICATIONS Computer terminals l Industrial systems controllers l Measuring instruments l Signal transmission between systems of different potentials and impedances l OPTION SM SURFACE MOUNT OPTION G 8.3 max 1.2 0.6 10.2 9.5 1.4 0.9 0.26 10.16 Total Power Dissipation 250mW (derate linearly 3.3mW/C above 25C) ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, TS25 1YD England Tel: (01429)863609 Fax : (01429) 863581 e-mail sales@isocom.co.uk http://www.isocom.com 5/2/03 DB90048-AAS/A4 ELECTRICAL CHARACTERISTICS ( TA = 25C Unless otherwise noted ) PARAMETER Input Forward Voltage (VF) Reverse Current (IR) Output Collector-emitter Breakdown (BVCEO) Collector-base Breakdown (BVCBO) Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) 30 50 5 100 MIN TYP MAX UNITS 1.2 1.5 10 V A TEST CONDITION IF = 50mA VR = 6V IC = 1mA (note 2) IC = 100A IE = 100A VCE = 10V 10mA IF , 10V VCE 10mA IF , 10V VCE 10mA IF , 10V VCE 8mA IF , 2mA IC 8mA IF , 2mA IC (note 1) (note 1) VIO = 500V (note 1) VCC = 10V, IC= 50mA, IF = 200mA , Pulse Width = 1ms fig.1 V V V nA Coupled Collector Output Current ( IC ) (Note 2) 4N32, 4N33 50 4N29, 4N30 10 4N31 5 Collector-emitter Saturation VoltageVCE(SAT) 4N29,4N30,4N32,4N33 4N31 Input to Output Isolation Voltage VISO Input-output Isolation Resistance RISO Output Turn on Time ton Output Turn off Time 4N32, 4N33 toff 4N29, 4N30, 4N31 5300 7500 5x1010 5 100 40 mA mA mA 1.0 1.2 V V VRMS VPK s s s Note 1 Note 2 Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. FIGURE 1 VCC = 10V IF = 200mA, Pulse width = 1ms IC = 50mA tr Input Output Output 10% 90% 10% 90% Input ton toff tf 5/2/03 DB90048-AAS/A4 Collector Power Dissipation vs. Ambient Temperature 200 Collector power dissipation PC (mW) Current transfer ratio CTR (%) 10000 5000 1000 800 500 100 50 10 Current Transfer Ratio vs. Forward Current 150 100 50 VCE = 10V TA = 25C 0 -30 0 25 50 75 100 125 Ambient temperature TA ( C ) Forward Current vs. Ambient Temperature 100 0 0.1 0.2 0.5 1 2 5 10 20 50 100 Forward current IF (mA) Collector Current vs. Collector-emitter Voltage 100 50mA 20 Collector current IC (mA) 80 60 40 2mA 20 0 -30 0 25 50 75 100 125 0 1 2 3 4 5 Ambient temperature TA ( C ) Collector-emitter Saturation Voltage vs. Ambient Temperature Collector-emitter voltage VCE ( V ) Relative Current Transfer Ratio vs. Ambient Temperature 1.5 IF = 1mA 10mA 5mA TA = 25C 80 Forward current IF (mA) Collector-emitter saturation voltage VCE(SAT) (V) 60 40 20 0 1.2 1.0 0.8 0.6 0.4 0.2 0 -30 0 Relative current transfer ratio IF = 8mA IC = 2mA IF = 10mA VCE = 10V 1.0 0.5 0 25 50 75 100 -30 Ambient temperature TA ( C ) 0 25 50 75 Ambient temperature TA ( C ) 100 5/2/03 DB90048-AAS/A4 |
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